| 氢退火对掺氮硅中氧施主电学行为的影响 |
| |
| 引用本文： | 王晓泉,杨德仁,余学功,马向阳,阙端麟.氢退火对掺氮硅中氧施主电学行为的影响[J].材料科学与工程学报,2003,21(3):353-355. |
| |
| 作者姓名： | 王晓泉 杨德仁 余学功 马向阳 阙端麟 |
| |
| 作者单位： | 浙江大学硅材料国家重点实验室,浙江,杭州,310027 |
| |
| 摘 要： | 本文主要研究了在氢气下退火对掺氮直拉硅中热施主(TDs)和氮氧(N—0)复合体的影响。实验结果表明，在氢气下低温退火对热施主和N—O复合体的生成与在氩气下差不多。这说明低温氢退火注入到硅中的氢的量很少，不会对硅片的电阻率产生明显的影响。
|
| 关 键 词： | 氮氧复合体 直拉单晶硅 氮 掺杂 氢 退火 热施主 电阻率 半导体 |
| 文章编号： | 1004-793X(2003)03-0353-03 |
| 修稿时间： | 2002年8月3日 |
Effect of Hydrogen Anneal on Electric Behavior in NCZ Silicon |
| |
| WANG Xiao-quan,YANG De-ren,YU Xue-gong,MA Xiang-yang,QUE Duan-lin.Effect of Hydrogen Anneal on Electric Behavior in NCZ Silicon[J].Journal of Materials Science and Engineering,2003,21(3):353-355. |
| |
| Authors: | WANG Xiao-quan YANG De-ren YU Xue-gong MA Xiang-yang QUE Duan-lin |
| |
| Abstract: | In this paper,the effect of hydrogen anneal on thermal donors(TDs) and N-O complexes in N-doped Cz wafer were investigated.The experimental result indicates that the generation of TDs and N-O complexes anaealed in hydrogen ambience is almost the same as those annealed in argon ambience.It is inferred that the concentration of hydrogen implanted in silicon by hydrogen anneal at low temperature is too low to effect the resistivity of silicon obviously. |
| |
| Keywords: | hydrogen anneal TDs N-O complexes czochralski Si |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
