|
|||||
|
|
Long-wavelength quantum-dot lasers |
|
| Authors: | M. Grundmann N. N. Ledentsov F. Hopfer F. Heinrichsdorff F. Guffarth D. Bimberg V. M. Ustinov A. E. Zhukov A. R. Kovsh M. V. Maximov Yu. G. Musikhin Zh. I. Alferov J. A. Lott N. D. Zhakharov P. Werner |
| Affiliation: | (1) Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraae 36, D-10623 Berlin, Germany;(2) A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia;(3) Air Force Institute of Technology, Wright-Patterson AFB, Ohio, USA;(4) Max-Planck-Institut für Mikrostrukturphysik Weinberg 2, D-06120 Halle/S, Germany |
| Abstract: | Quantum dots (QD) of (InGaAs/GaAs) on GaAs substrate with long-wavelength emission (1300 nm) have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for use in surface-emitting laser diodes. QDs are obtained by employing two different approaches, seeding and overgrowth with a quantum well, yielding similar recombination spectra. Despite the shift to long wavelengths, a large separation ( 80 meV) between excited states is maintained. The introduction of such QDs into a vertical cavity leads to a strong narrowing of the emission spectrum. Lasing from 1300-nm QD VCSEL is reported. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |