| 一种适用于射频电子标签的超低功耗嵌入式EEPROM |
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| 引用本文： | 闫娜,谈熙,赵涤燹,闵昊.一种适用于射频电子标签的超低功耗嵌入式EEPROM[J].半导体学报,2006,27(6):994-998. |
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| 作者姓名： | 闫娜 谈熙 赵涤燹 闵昊 |
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| 作者单位： | 复旦大学专用集成电路与系统国家重点实验室,Auto-ID实验室,上海,201203;复旦大学专用集成电路与系统国家重点实验室,Auto-ID实验室,上海,201203;复旦大学专用集成电路与系统国家重点实验室,Auto-ID实验室,上海,201203;复旦大学专用集成电路与系统国家重点实验室,Auto-ID实验室,上海,201203 |
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| 摘 要： | 采用Chartered 0.35μm EEPROM工艺设计并实现了一个适用于无源射频电子标签的256位超低功耗EEPROM存储器.芯片实现了块编程和擦写功能,并通过优化敏感放大器和控制逻辑的结构,实现了读存储器时间和功耗的最优化.最后给出了芯片在编程/擦写/读操作情况下的功耗测试结果.在电源电压为1.8V,数据率为640kHz时,EEPROM编程/擦写的平均功耗约为68μA,读操作平均功耗约为0.6μA.
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| 关 键 词： | 射频识别 EEPROM 存储器 电荷泵 敏感放大器 低功耗 |
An Ultra-Low-Power Embedded EEPROM for Passive RFID Tags |
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| Yan Na,Tan Xi,Zhao Dixian,Min Hao.An Ultra-Low-Power Embedded EEPROM for Passive RFID Tags[J].Chinese Journal of Semiconductors,2006,27(6):994-998. |
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| Authors: | Yan Na Tan Xi Zhao Dixian Min Hao |
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| Abstract: | An ultra-low-power,256-bit EEPROM is designed and implemented in a Chartered 0.35μm EEPROM process. The read state power consumption is optimized using a new sense amplifier structure and an optimized control circuit. Block programming/erasing is achieved using an improved control circuit. An on silicon program/erase/read access time measurement design is given. For a power supply voltage of 1.8V,an average power consumption of 68 and 0.6μA for the program/erase and read operations,respectively,can be achieved at 640kHz. |
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| Keywords: | radio frequency identification EEPROM memory charge pump sense amplifier low power |
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