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| SiGe HBT传输电流模型研究 | |
| 引用本文： | 胡辉勇,张鹤鸣,戴显英,宣荣喜,崔晓英,王青,姜涛. SiGe HBT传输电流模型研究[J]. 半导体学报, 2006, 27(6): 1059-1063 |
| 作者姓名： | 胡辉勇 张鹤鸣 戴显英 宣荣喜 崔晓英 王青 姜涛 |
| 作者单位： | 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071 |
| 基金项目： | 国家部委预研基金，国家重点实验室基金 |
| 摘 要： | 基于SiGe异质结双极晶体管(HBT)大信号等效电路模型,建立了SiGe HBT传输电流模型.重点考虑发射结能带的不连续对载流子输运产生的影响,通过求解流过发射结界面的载流子密度,建立了SiGe HBT传输电流模型.该模型物理意义清晰,拓扑结构简单.对该模型进行了模拟,模拟结果与文献报道的结果符合得较好.将该模型嵌入PSPICE软件中,实现了对SiGe HBT器件与电路的模拟分析,并对器件进行了直流分析,分析结果与文献报道的结果符合得较好. |
| 关 键 词： | SiGe 异质结双极晶体管 传输电流 PSPICE软件 |
| 收稿时间： | 2015-08-20 |
Transport Current Model of SiGe HBT |
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| Hu Huiyong, Zhang Heming, Dai Xianying, Xuan Rongxi, Cui Xiaoying, Wang Qing, Jiang Tao. Transport Current Model of SiGe HBT[J]. Journal of Semiconductors, 2006, In Press. Hu H Y, Zhang H M, Dai X Y, Xuan R X, Cui X Y, Wang Q, Jiang T. Transport Current Model of SiGe HBT[J]. Chin. J. Semicond., 2006, 27(6): 1059.Export: BibTex EndNote | |
| Authors: | Hu Huiyong Zhang Heming Dai Xianying Xuan Rongxi Cui Xiaoying Wang Qing Jiang Tao |
| Affiliation: | Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China;Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China;Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China;Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China;Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China;Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China;Key Laboratory of the Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China |
| Abstract: | Based on the large signal equivalent circuit model of SiGe heterojunction bipolar transistor(HBT),a SiGe HBT transport current model is developed that takes the influence on carrier transport of the energy band discontinuity of the emitter into account.The model features the definite physical meaning and simple topology.The simulated results agree well with the results theoretically analyzed in other literature.The DC characteristic simulated by PSPICE,into which the model is embedded,is in accord with that in other literatures. |
| Keywords: | SiGe heterojunction bipolar transistor transport current PSPICE |
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