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Cu和Cr缓冲层对SmCo_5薄膜微观结构和磁性能的影响
引用本文:张敬凌,葛妮娜,王振,谭士杰,王玉波,邱林俊,徐景.Cu和Cr缓冲层对SmCo_5薄膜微观结构和磁性能的影响[J].磁性材料及器件,2016(5).
作者姓名:张敬凌  葛妮娜  王振  谭士杰  王玉波  邱林俊  徐景
作者单位:1. 西南科技大学 四川省非金属复合与功能材料重点实验室-省部共建国家重点实验室培育基地,四川绵阳,621000;2. 西南科技大学 四川省非金属复合与功能材料重点实验室-省部共建国家重点实验室培育基地,四川绵阳 621000; 西南应用磁学研究所,四川绵阳 621000
基金项目:国家自然科学基金资助项目(50901050;51101079;11164011)
摘    要:利用新型AE(Advanced Energy)脉冲电源采取共溅射的方式在Si片上制备不同结构的Cr/SmCo_5/Cr和Cu/SmCo_5/Cr薄膜,并分别研究Cu和Cr缓冲层对SmCo_5薄膜磁性能和微观结构的影响。以Cu作为缓冲层时,在优于2×10―5Pa的真空环境下通过对样品在650℃退火60min,可以获得较良好的硬磁性能,垂直膜面的矫顽力可以达到1308Oe。以Cr作为缓冲层时,在低于2×10~(-5)Pa的真空环境中,且在650℃退火60min便制备出样品。随后分别改变Cr缓冲层的厚度和SmCo_5的厚度并观察其对Cr/SmCo_5/Cr的磁性能的影响。

关 键 词:Cr(Cu)/SmCo5/Cr薄膜  缓冲层  结构  磁性能

Influence of Cu and Cr buffer layers on the microstructure and magnetic properties of SmCo5thin films
ZHANG Jing-ling,GE Ni-na,WANG Zhen,TAN Shi-jie,WANG Yu-bo,QIU Lin-jun,XU Jing.Influence of Cu and Cr buffer layers on the microstructure and magnetic properties of SmCo5thin films[J].Journal of Magnetic Materials and Devices,2016(5).
Authors:ZHANG Jing-ling  GE Ni-na  WANG Zhen  TAN Shi-jie  WANG Yu-bo  QIU Lin-jun  XU Jing
Abstract:Cr / SmCo5 / Cr and Cu / SmCo5 / Cr films with different structures were deposited on the Si wafer by co-sputtering method using new AE (Advanced Energy) pulse power. Influence of Cu and Cr buffer layer on the magnetic properties and microstructure of SmCo5 film was investigated. Experiments show that, for Cu as buffer layer the sample annealed at 650℃ for 60min in vacuum environment of superior to 2×10―5Pahas better hard magnetic properties, with 1308Oe of coercive force perpendicular to the film plane; for Cr as buffer layer the sample was prepared by annealing at 650℃ for 60min in a vacuum atmosphere below 2×10―5Pa. Finally, the influence of thickness of Cr buffer layer and SmCo5 layer on the magnetic properties of Cr/SmCo5 /Cr film was researched.
Keywords:Cr(Cu)/SmCo5/Cr film  buffer layer  structure  magnetic properties
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