Low temperature seamless joining of SiC using a Ytterbium film |
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| Affiliation: | 1. Engineering Laboratory of Advanced Energy Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China;2. Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China;1. College of Materials and Advanced Manufacturing, Hunan University of Technology, Zhuzhou, 412007, China;2. State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China;3. Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha, 410083, China;4. Engineering Laboratory of Advanced Energy Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China;1. School of Engineering & Materials Science and Nanoforce Technology Ltd., Queen Mary University of London, Mile End Road, London E1 4NS, United Kingdom;2. Institute of Physics of Materials, Academy of Sciences of the Czech Republic, ?i?kova 22, 616 62 Brno, Czech Republic;3. Politecnico di Torino, Applied Science and Technology Department, Corso Duca degli Abruzzi 24, 10129 Torino, Italy;1. School of Materials Science and Engineering, Chang''an University, Xi''an, 710064, Shaanxi, PR China;2. Science and Technology on Thermostructural Composite Materials Laboratory, Northwestern Polytechnical University, Xi''an, 710072, Shaanxi, PR China |
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| Abstract: | Monolithic SiC, for the first time, was seamless joined at a low temperature of 1200 °C using electric field-assisted sintering technology. A 300 nm Yb coating on SiC was used as the joining filler to form Yb3Si2C2 via an in-situ reaction with the SiC. A liquid phase was formed by an eutectic reaction between Yb3Si2C2 and SiC. Almost completely seamless joints were formed by the precipitated SiC grains, which were fully consolidated with the SiC matrix with the help of in-situ formed liquid phase, followed by its elimination under the uniaxial pressure. The bending strength of the seamless joint joined at 1500 °C for 15 min was as high as 257.2 ± 31.1 MPa, which was comparable to the strength of the SiC matrix. As a result, the failure occurred in the matrix indicated a sound joint was obtained. The proposed low temperature seamless joining could potentially be used for joining of SiC-based composite. |
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| Keywords: | SiC Joining Electric field-assisted sintering |
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