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| SBT铁电薄膜及其脉冲准分子激光制备 | |
| 引用本文： | 杨平雄,郑立荣,王连卫,林成鲁,周宁生,陆怀先. SBT铁电薄膜及其脉冲准分子激光制备[J]. 中国激光, 1997, 24(5): 397-400 |
| 作者姓名： | 杨平雄 郑立荣 王连卫 林成鲁 周宁生 陆怀先 |
| 作者单位： | 中国科学院上海冶金研究所信息功能材料国家重点实验室，南京大学固体微结构国家重点实验室 |
| 摘 要： | 采用脉冲准分子激光沉积法在Ｐｔ／Ｔｉ／ＳｉＯ２／Ｓｉ衬底上成功地制备了ＳＢＴ铁电薄膜，发现存在一个最佳沉积衬底温度约为４５０℃。在该温度下沉积的ＳＢＴ薄膜具有较饱和的方形电滞回线，其剩余极化Ｐｒ和矫顽电场Ｅｃ分别为８．４μＣ／ｃｍ２和５７ｋＶ／ｃｍ。 |
| 关 键 词： | SBT，脉冲激光沉积，铁电薄膜 |
| 收稿时间： | 1996-05-02 |
SBT Ferroelectric Thin Films Prepared by Pulsed Excimer Laser Deposition |
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| Yang Pingxiong Zheng Lirong Wang Lianwei Lin Chenglu. SBT Ferroelectric Thin Films Prepared by Pulsed Excimer Laser Deposition[J]. Chinese Journal of Lasers, 1997, 24(5): 397-400 | |
| Authors: | Yang Pingxiong Zheng Lirong Wang Lianwei Lin Chenglu |
| Abstract: | The perovskite like SrBi 2Ta 2O 9 thin films have been successfully prepared on Si/SiO 2/Ti/Pt substrate by pulsed eximer laser deposition. The crystallization and ferroelectric property were clearly dependent on the substrate temperature. The SrBi 2Ta 2O 9 thin film with fine grain size and well saturated square hysteresis loop was obtained at 450℃ substrate temperature. Good ferroelectric properties were obtained from the SBT film; Pr and Ec were 8.4 μC/cm 2 and 57 kV/cm, respectively. |
| Keywords: | SBT pulsed eximer laser deposition ferroelectric thin film |
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