Fe_(4-x)Ga_xN薄膜的制备及其电导行为

利用电子束蒸发沉积的方法制备了不同Ga含量的FeGa合金薄膜,采用XRD和EDS对制得的FeGa合金薄膜的物相和成分进行了分析。合金薄膜在氨/氢比1:1的气氛中500℃下被氮化,使用XRD、SEM对氮化后薄膜的物相组成、微观形貌进行了分析,并通过Hall测试系统对氮化后薄膜的电导行为进行了分析。结果表明,氮化得到了钙钛矿结构的Fe4-xGaxN,氮化后晶粒有轻微长大,Ga元素在薄膜中分布均匀;随着Ga含量的增大,薄膜的载流子浓度和电子迁移率都呈现出降低的趋势,电阻率逐渐增大。

Preparation of Fe4-xGaxN Films and Their Conductive Behavior

FeGa films with different Ga element contents were prepared on glass slide by the conventional electron beam evaporation deposition. Phase and quantitative determination of metal element in the films were analyzed by XRD and EDS, respectively. The FeGa films were nitridized at 500 oC and the ammonolysis gas was a NH3:H2 mixture with a 1:1 ratio. Phase and microstructure of the films after nitriding were analyzed by XRD and SEM, respectively. Conductivity behavior of the films after nitriding was analyzed by Hall system. The results show that the phase of films transforms into Fe4-xGaxN with perovskite structure, crystal particles grow slightly after nitriding and Ga element scatters evenly in the film. Carrier concentration and electron mobility of Fe4-xGaxN films decrease with the increasing of Ga content, but the resistivity increases.