| nBn型InSb红外器件性能仿真 |
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| 引用本文： | 周朋,刘铭,邢伟荣.nBn型InSb红外器件性能仿真[J].激光与红外,2018,48(7):872-875. |
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| 作者姓名： | 周朋 刘铭 邢伟荣 |
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| 作者单位： | 华北光电技术研究所,北京 100015 |
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| 摘 要： | 从能带结构方面分析了InSb nBn结构的势垒层,并使用Sentaurus TCAD软件计算并模拟了改进前后的器件IV性能,仿真结果表明,在势垒层靠近吸收层一侧加入渐变层可以有效改进器件性能。之后模拟仿真了势垒层Al组分、厚度对器件性能的影响。最后根据仿真结果选定结构参数进行实际分子束外延生长,并给出初步的器件结果。
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| 关 键 词： | nBn InSb 能带 IV特性 Sentaurus TCAD |
Performance simulation of nBn InSb infrared device |
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| ZHOU Peng,LIU Ming,XING Wei-rong.Performance simulation of nBn InSb infrared device[J].Laser & Infrared,2018,48(7):872-875. |
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| Authors: | ZHOU Peng LIU Ming XING Wei-rong |
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| Affiliation: | North China Research Institute of Electro-Optics,Beijing 100015,China |
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| Abstract: | Barrier layer of nBn InSb is analyzed from energy band,Sentaurus TCAD is used to calculate and simulate IV performance of nBn InSb infrared device.The simulation results show that,the gradient layer is introduced near the absorption layer side in the barrier layer,and it can effectively improve the performance of the device.And then,the influence of Al composition and thickness of the barrier layer on the device performance are analyzed.According to the simulation results,selected structural parameters are used to grow nBn InSb by MBE,and the testing results of the device are given. |
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