High-sensitivity Hi-Lo germanium avalanche photodiode for 1.5 ?m-wavelength optical communication |
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| Authors: | Niwa M. Tashiro Y. Minemura K. Iwasaki H. |
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| Affiliation: | NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan; |
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| Abstract: | A high-sensitivity small-detectable-area Hi-Lo germanium avalanche photodiode (Ge APD) was developed for use in 1.55 ?m wavelength optical communication systems. This device has Hi-Lo (p+nn?) impurity profile. Its detectable area is 30 ?m in diameter for single-mode optical-fibre use. The minimum average received signal level obtained was ?40.5 dBm (at 450 Mbit/s, ? = 1.55 ?m, BER = 10?9, return-to-zero). This is 0.7 dB better than the value for the 80?m diameter similar structure Ge APD. |
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