| P型稀磁半导体材料的居里温度 |
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| 引用本文： | 关玉琴,陈余,赵春旺.P型稀磁半导体材料的居里温度[J].粉末冶金材料科学与工程,2010,15(5). |
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| 作者姓名： | 关玉琴 陈余 赵春旺 |
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| 作者单位： | 内蒙古工业大学理学院; |
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| 基金项目： | 国家自然科学基金，内蒙古工业大学校基金 |
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| 摘 要： | 稀磁半导体(DMS)材料日益受到科技界和工业界的关注。本文根据ZENER模型研究稀磁半导体材料的居里温度。计算结果证明:同种基质材料掺杂不同的金属元素,低价元素掺杂形成的DMS材料居里温度较高。在考虑反铁磁性交换作用时,低价元素掺杂形成的DMS材料的居里温度与高价元素掺杂形成的DMS材料的居里温度的差别,比不考虑反铁磁性交换作用时居里温度的差别更为明显,且差别随反铁磁性交换作用相对强度的增加而增加。该研究结果可为获得具有高居里温度的DMS材料提供参考。
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| 关 键 词： | 稀磁半导体 居里温度 掺杂浓度 反铁磁性交换作用 |
Curie temperature of P-type diluted magnetic semiconductor materials |
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| GUAN Yu-qin,CHEN Yu,ZHAOChun-wang.Curie temperature of P-type diluted magnetic semiconductor materials[J].materials science and engineering of powder metallurgy,2010,15(5). |
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| Authors: | GUAN Yu-qin CHEN Yu ZHAOChun-wang |
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| Affiliation: | GUAN Yu-qin,CHEN Yu,ZHAO Chun-wang (Department of Physics,Inner Mongolia University of Technology,Hohhot 010051,China) |
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| Abstract: | The scientific and technological as well as industrial circles are of increasing concern to diluted magnetic semiconductor(DMS) materials.In the present,based on the ZENER model,the Curie temperature of the DMS materials was studied.The results show that the Curie temperature of the DMS materials formed by doping with low-valence elements is higher in the cases when the matrix material doped with different kinds of metallic elements.When the antiferromagnetic exchange coupling is considered,the difference b... |
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| Keywords: | diluted magnetic semiconductors Curie temperature doping concentration anti-ferromagnetic exchange interaction |
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