Theory of 1/f noise in bipolar silicon planar transistors |
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| Authors: | Martin J.C. Esteve D. Blasquez G. Ribeyrol J.M. |
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| Affiliation: | CRNS, Laboratoire d'Automatique et de ses Applications Spatiales, Toulouse, France; |
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| Abstract: | ![]()
A theory of 1/f low-frequency noise in silicon planar transistors is developed. It relates this noise to fluctuations in base current produced by fluctuations of occupied traps in the silicon dioxide. It is shown that the theoretical relationship of noise is consistent with experiment. |
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