Sputtering yield of Ti1−xBx films by 2 keV deuterium bombardment

We deposited titanium borides (Ti_1?xB_x; 0.40 < x < 0.77) by the co-sputter coating method and measured their sputtering yield by 2 keV deuterium ion bombardment as a function of their chemical composition at room temperature. The total sputtering yield is found to increase with increase of the boron content in Ti_1?xB_x. The total sputtering yield of stoichiometric TiB₂ is estimated to be 2.8 × 10^?2, about the same as those reported previously. Concerning the partial sputtering yield, that of the titanium does not depend on the chemical composition, but that of the boron increases with increase of the boron content. These experimental results could be explained by assuming that the partial sputtering yield is proportional to the spatial concentration of each atom in the Ti_1?xB_x matrix.