DC Characteristics of AlGaAs/GaAs/GaN HBTs Formed by Direct Wafer Fusion |
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| Authors: | Lian C. Xing H. Wang C. S. McCarthy L. Brown D. |
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| Affiliation: | Dept. of Electr. Eng., Notre Dame Univ., IN; |
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| Abstract: | We have fabricated AlGaAs/GaAs/GaN heterojunction bipolar transistors (HBTs) formed by direct wafer fusion with different fusion temperatures. By employing a low wafer fusion temperature of 550 degC, current gains as high as ~9 and output currents as high as ~65 mA (emitter size of 100times120 mum2) were obtained. The effective minority carrier lifetime in the base was estimated to have decreased ~20 times due to the fusion process. In comparison, HBTs produced with higher wafer fusion temperatures (600 degC and 650 degC) exhibit lower current gains (~2-3) and higher base-collector leakage currents |
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