Refractive index of GaAs-AlAs superlattice grown by MBE |
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| Authors: | Yoshifumi Suzuki Hiroshi Okamoto |
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| Affiliation: | (1) Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, 180 Musashino-shi, Tokyo, Japan |
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| Abstract: | Refractive index ¯n of GaAs-AlAs superlattices grown by MBE is measured in the spectral range 1.2–1.8 eV at 300 K. Results show that for superlattices with LB ≤ 40–50 Å, ¯n is determined by the averaged AlAs mole fraction, but that for superlattices with LB ≥ 40–50 Å, ¯n is determined by energy separation of confined electrons and holes (E1(e-hh)). |
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| Keywords: | refractive index GaAs AlAs superlattice MBE |
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