| 在GaAs上用电子束蒸发淀积LaB_6薄膜及其界面的电学特性 |
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| 引用本文： | 毛祖遂,魏赛珍,刘古.在GaAs上用电子束蒸发淀积LaB_6薄膜及其界面的电学特性[J].真空科学与技术学报,1992(5). |
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| 作者姓名： | 毛祖遂 魏赛珍 刘古 |
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| 作者单位： | 浙江大学物理系，浙江大学物理系，浙江大学物理系 杭州 310027，杭州 310027，杭州 310027 |
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| 摘 要： | 用自制的简便电子束蒸发炉,在GaAs(100)表面上蒸发淀积了良好的LaB_6薄膜,由AES分析表明膜成分的化学配比正确,并制成LaB_6/GaAs肖特基二极管,基势垒高度为0.75eU(Ⅰ-Ⅴ法),理想因子为1.1,反向击穿电压达16V,表明LaB_6作为GaAs MESFET的栅材料是合适的。
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| 关 键 词： | 电子束 蒸发 LaB_6薄膜 界面电学特性 |
LaB_6 FILM DEPOSITED ON GaAs BY ELECTRON BEAM EVAPORATION AND ITS INTERFACE ELECTRONIC CHARACTERISTICS |
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| Mao Zhusui,Wei Saizhen,Liu Gu.LaB_6 FILM DEPOSITED ON GaAs BY ELECTRON BEAM EVAPORATION AND ITS INTERFACE ELECTRONIC CHARACTERISTICS[J].JOurnal of Vacuum Science and Technology,1992(5). |
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| Authors: | Mao Zhusui Wei Saizhen Liu Gu |
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| Abstract: | In this article a self-made electron evaporator is described, by which good LaB_6 film has been deposited onto GaAs (100) surface with correct stoichiometry as indicated by AES analysis. LaB_6/GaAs Schottky-barrier diodes have also been made with barrier height 0.75(eV), ideality factor 1.1, and reverse breakdown voltage up to 16(V),showing the applicability in GaAs MESFET and GaAs VHSIC. |
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| Keywords: | Electron beam Evaporation LaB_6 film Interface electronic characteristics |
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