Bond strain and defects at interfaces in high-k gate stacks |
| |
Authors: | G Lucovsky JC Phillips |
| |
Affiliation: | aDepartment of Physics, North Carolina State University, Raleigh, NC 27695-8202, USA;bDepartment of Physics, Rutgers University, Piscataway, NJ 08854, USA |
| |
Abstract: | The performance and reliability of aggressively-scaled field effect transistors are determined in large part by electronically-active defects and defect precursors at the Si–SiO2, and internal SiO2–high-k dielectric interfaces. A crucial aspect of reducing interfacial defects and defect precursors is associated with bond strain-driven bonding interfacial self-organizations that take place during high temperature annealing in inert ambients. The interfacial self-organizations, and intrinsic interface defects are addressed through an extension of bond constraint theory from bulk glasses to interfaces between non-crystalline SiO2, and (i) crystalline Si, and (ii) non-crystalline and crystalline alternative gate dielectric materials. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|