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Approach to Weaken Auto doping Effect in Si CVD Epitaxy by Compensation in Opposite Direction
Authors:Liu Yuling  Jin Jie and Xu XiaohuiHebei University of Technology  Tianjin  China
Affiliation:Liu Yuling,Jin Jie and Xu XiaohuiHebei University of Technology,Tianjin 300130,China
Abstract:The mechanism of auto doping was discussed. The technological optimization and technical simplification for adsorption desorption, steady dynamic transformation were conducted with compensation in opposite direction. In many cases the auto doping could be controlled effectively.
Keywords:Silicon  CVD  Epitaxy  Auto  doping
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