Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping |
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Authors: | Dalapati Goutam Kumar Shun Wong Terence Kin Li Yang Chia Ching Kean Das Anindita Mahata Chandreswar Gao Han Chattopadhyay Sanatan Kumar Manippady Krishna Seng Hwee Leng Maiti Chinmay Kumar Chi Dong Zhi |
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Affiliation: | Institute of Materials Research and Engineering, A*STAR, (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602, Singapore. dalapatig@imre.a-star.edu.sg. |
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Abstract: | ABSTRACT: Electrical and physical properties of a metal-oxide-semiconductor MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV).PACS: 81.15.Gh. |
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Keywords: | epitaxial-GaAs Ge out-diffusion and auto-doping ALD high-k dielectrics |
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