Improvement of field emission performance on nitrogen ion implanted ultrananocrystalline diamond films through visualization of structure modifications |
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| Authors: | Ying-Chieh Chen Xiao-Yan ZhongBernd Kabius Jon M HillerNyan-Hwa Tai I-Nan Lin |
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| Affiliation: | a Department of Materials Science and Engineering, National Tsing-Hua University, Hsin-Chu 300, Taiwanb Materials Science Division, Argonne National Laboratory, Argonne, IL 60349, USAc Department of Physics, Tamkang University, Tamsui 251, Taiwan |
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| Abstract: | The relationship between the electron field emission properties and structure of ultra-nanocrystalline diamond (UNCD) films implanted by nitrogen ions or carbon ions was investigated. The electron field emission properties of nitrogen-implanted UNCD films and carbon-implanted UNCD films were pronouncedly improved with respect to those of as-grown UNCD films, that is, the turn-on field decreased from 23.2 V/μm to 12.5 V/μm and the electron field emission current density increased from 10E−5 mA/cm2 to 1 × 10E−2 mA/cm2. The formation of a graphitic phase in the nitrogen-implanted UNCD films was demonstrated by Raman microscopy and cross-sectional high-resolution transmission electron microscopy. The possible mechanism is presumed to be that the nitrogen ion irradiation induces the structure modification (converting sp3-bonded carbons into sp2-bonded ones) in UNCD films. |
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| Keywords: | UNCD Ion implantation HRTEM |
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