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| GaN薄膜的研究进展 | |
| 引用本文： | 马洪磊,杨莺歌,刘晓梅,刘建强,马瑾. GaN薄膜的研究进展[J]. 功能材料, 2004, 35(5): 537-540,544 |
| 作者姓名： | 马洪磊 杨莺歌 刘晓梅 刘建强 马瑾 |
| 作者单位： | 山东大学,物理与微电子学院,山东,济南,250100;山东大学,计算机科学与技术学院,山东,济南,250100 |
| 摘 要： | 由于GaN薄膜有希望应用在紫外或蓝光发光器件、探测器以及高速场效应晶体管、高温电子器件,GaN材料是当前研究的一个焦点。本文简要介绍了GaN薄膜的制备、衬底选择、掺杂、缓冲层、发光机制和表征等方面的最新进展。指出GaN材料进一步发展需要解决的关键技术问题。 |
| 关 键 词： | GaN薄膜 研究进展 发光机制 |
| 文章编号： | 1001-9731(2004)05-0537-04 |
Research progress in GaN thin films |
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| MA Hong-lei,YANG Ying-ge,LIU Xiao-mei,LIU Jian-qiang,MA Jin. Research progress in GaN thin films[J]. Journal of Functional Materials, 2004, 35(5): 537-540,544 | |
| Authors: | MA Hong-lei YANG Ying-ge LIU Xiao-mei LIU Jian-qiang MA Jin |
| Affiliation: | MA Hong-lei~1,YANG Ying-ge~1,LIU Xiao-mei~2,LIU Jian-qiang~1,MA Jin~1 |
| Abstract: | GaN thin films are the focus of current research because of the promise for use as UV or blue emitters, detectors, high-speed field-effect transistor, and high-temperature electronic devices. Recent development for GaN thin films in preparation, choice of substrates, doping, buffer layer, photoluminescence mechanism and characterization was briefly described and reviewed. The key technologies to be solved for GaN thin films were pointed out. |
| Keywords: | GaN thin films research progress photoluminescence mechanism |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |