| ULSI低介电常数材料制备中的CVD技术 |
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| 引用本文： | 王鹏飞,丁士进,张卫,王季陶,李伟. ULSI低介电常数材料制备中的CVD技术[J]. 微细加工技术, 2001, 1(1): 30-36 |
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| 作者姓名： | 王鹏飞 丁士进 张卫 王季陶 李伟 |
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| 作者单位： | 1. 复旦大学电子工程系,
2. 台湾集成电路公司 |
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| 基金项目： | 国家自然科学基金资助项目(69776026) |
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| 摘 要： | 综述了制备ULSI低介电常数材料的各种CVD技术。详细介绍了PCVD技术淀积含氟氧化硅薄膜、含氟无定型碳膜与聚酰亚胺类薄膜的工艺，简要介绍了APCVD技术淀积聚对二甲苯类有机薄膜及RTCVD技术淀积SiOF薄膜的工艺。
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| 关 键 词： | 互连延迟 低介电常数材料 化学气相淀积 集成电路 ULSI |
| 文章编号： | 1003-8213(2001)01-0030-07 |
| 修稿时间： | 2000-02-24 |
CVD technologies used inpreparation of low dielectric constant CVD technologies used in preparation of lowdielectric constant |
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| WANG Peng?fei,DING Shi?jin,ZHANG Wei,WANG Ji?tao,LI Wei. CVD technologies used inpreparation of low dielectric constant CVD technologies used in preparation of lowdielectric constant[J]. Microfabrication Technology, 2001, 1(1): 30-36 |
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| Authors: | WANG Peng?fei DING Shi?jin ZHANG Wei WANG Ji?tao LI Wei |
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| Affiliation: | WANG Peng?fei1,DING Shi?jin1,ZHANG Wei1,WANG Ji?tao1,LI Wei2 |
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| Abstract: | Various CVD technologies for preparing low dielectric constant materials in ULSI circuits are summarized.The processes of deposition of fluorinated silicon oxide thin films,fluorinated amorphous carbon thin films and polyimide films are discussed in detail.The APCVD and RTCVD methods applied to prepare parylene films and fluorinated silicon oxide thin films are also briefly introduced. |
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| Keywords: | Interconnection delay Low dielectric constant material Chemical vapor deposition |
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