Frequency Effect on Voltage Linearity of $ hbox{ZrO}_{2}$-Based RF Metal–Insulator–Metal Capacitors |
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| Authors: | Bertaud T. Blonkowski S. Bermond C. Vallee C. Gonon P. Gros-Jean M. Flechet B. |
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| Affiliation: | IMEP-LAHC, UMR CNRS 5130, Université de Savoie, Le Bourget du Lac, France; |
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| Abstract: | This letter deals with the electrical and wideband frequency characterizations of metal–insulator–metal capacitors integrating medium-$kappa$ material, $hbox{ZrO}_{2}$. In particular, this letter focuses on the frequency effect on the voltage linearity of these capacitors and material. The dependence of the voltage–capacitance coefficient (VCC) $alpha$ is, for the first time, studied from 1 kHz to 1 GHz. Intrinsic or extrinsic material origin of the VCC are discussed. |
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