IR and electrical properties of thin silicon oxynitride films synthesized by ion implantation

Silicon oxynitride (Si_xO_yN_z) layers were synthesized by implanting single-crystal silicon with ¹⁴N₂⁺ and ¹⁶O₂⁺ 30 keV ions in different proportions to doses varying from 1 × 10¹⁷ to 1 × 10¹⁸ ions cm^-2. IR transmission techniques were used to investigate the structural dependence on the total ion dose and on the annealing temperature. Electrical properties, namely the dielectric strength and the current-voltage and capacitance-voltage characteristics, of the ion-beam-synthesized Si_xO_yN_z layers and changes in them after annealing were measured.