Electrical transport properties of heavily indium- doped polycrystalline CdS films

CdS was doped with up to 1.5 at.% In by means of a chemical method. Films were produced from the chemically prepared charge by evaporation onto glass. Measurements of the d.c. conductivity and the Hall effect were made on these films. It was observed that the carrier concentration in the films increases by two orders of magnitude on the addition of 1.0 at.% In. The carrier concentration remains almost constant, however, on further addition of indium. In contrast, the mobility increases on the addition of indium up to 1.0 at.% but it decreases when further indium is added.