Approximate evaluation of operating conditions and effectiveness of solar impurity thermovoltaic element |
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| Authors: | M S Saidov |
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| Affiliation: | 1.Institute of Materials Sciences, “Fizika-Solntse” NPO,Uzbekistan Academy of Sciences,Tashkent,Uzbekistan |
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| Abstract: | The effectiveness of solar impurity thermovoltaic elements based on semiconductors with forbidden gap width 0.3 eV with thin
highly doped p- and n-layers with concentration ∼5 × 1019 cm−3, containing in addition a deep impurity with concentration ∼4 × 1018 cm−3 and ionization energy 0.15 eV, is shown to reach 30–40% with solar radiation intensity 0.1 W/cm2. |
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