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| InP基应变自组装纳米材料及其光电子器件研究进展 | |
| 引用本文： | 雷文,陈涌海,程伟明,车晓玲,刘俊歧,黄秀颀,王占国. InP基应变自组装纳米材料及其光电子器件研究进展[J]. 微纳电子技术, 2004, 41(4): 8-17 |
| 作者姓名： | 雷文 陈涌海 程伟明 车晓玲 刘俊歧 黄秀颀 王占国 |
| 作者单位： | 1. 中国科学院半导体研究所半导体材料重点实验室,北京,100083 2. 华中科技大学电子科学与技术系,湖北武,汉,430074 |
| 基金项目： | 国家重点基础规划项目(G2000068303);国家自然科学基金项目(60290084) |
| 摘 要： | 半导体低维结构材料,如量子线(点)材料,由于其特殊的电子结构,在新一代光电子、微电子器件中有着重要的应用价值。本文对应变自组装InP基量子线(点)材料的生长制备、光学和电学特性及其在半导体激光器、红外探测器及其他光电子和微电子器件中的应用进行了综述,指出了目前需要改进的一些方面,并提出了一些相应的解决途径。 |
| 关 键 词： | InP 应变自组装 光电子器件 |
| 文章编号： | 1671-4776(2004)04-0008-10 |
| 修稿时间： | 2003-11-27 |
The progress in the study of InP based strain induced self-assembly materials and their opto-electronic devices |
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| LEI Wen,CHEN Yong-hai,CHENG Wei-ming,CHE Xiao-ling,LIU Jun-qi,HUANG Xiu-qi,WANG Zhan-guo. The progress in the study of InP based strain induced self-assembly materials and their opto-electronic devices[J]. Micronanoelectronic Technology, 2004, 41(4): 8-17 | |
| Authors: | LEI Wen CHEN Yong-hai CHENG Wei-ming CHE Xiao-ling LIU Jun-qi HUANG Xiu-qi WANG Zhan-guo |
| Affiliation: | LEI Wen1,CHEN Yong-hai1,CHENG Wei-ming2,CHE Xiao-ling1,LIU Jun-qi1,HUANG Xiu-qi1,WANG Zhan-guo1 |
| Abstract: | Due to their special electronic properties,the low dimensional semiconductor materials,such as quantum wires,quantum dots,have important application in the future opto-electronic and micro-electronic devices. In this paper,the growth,optical and electronic properties of strain induced self-assembly nano-materials on InP,and their applications in semiconductor lasers,infrared detectors and other devices are summarized. Suggestions have been presented to improve the quality of these nano-materials and their devices. |
| Keywords: | InP strain induced self-assembly opto-electronic devices |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |