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Grain growth in porous two-dimensional nanocrystalline materials
Authors:Leonid Klinger  Eugen Rabkin  Lasar S. Shvindlerman  Günter Gottstein
Affiliation:(1) Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa, 32000, Israel;(2) Institute of Physical Metallurgy and Metal Physics, RWTH Aachen University, Aachen, 52056, Germany;(3) Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow district, 142432, Russia
Abstract:Grain growth in two-dimensional polycrystals with mobile pores at the grain boundary triple junctions is considered. The kinetics of grain and pore growth are determined under the assumption that pore sintering and pore mobility are controlled by grain boundary and surface diffusion, respectively. It is shown that a polycrystal can achieve full density in the course of grain growth only when the initial pore size is below a certain critical value which depends on kinetic parameters, interfacial energies, and initial grain size. Larger pores grow without limits with the growing grains, and the corresponding grain growth exponent depends on kinetic parameters and lies between 2 and 4. It is shown that for a polycrystal with subcritical pores the average grain size increases linearly with time during the initial stages of growth, in agreement with recent experimental data on grain growth in thin Cu films and in bulk nanocrystalline Fe.
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