A resistive-feedback LNA in 65 nm CMOS with a gate inductor for bandwidth extension |
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| Affiliation: | 1. School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China;2. Rising Micro Electronics Co., Ltd., Guangzhou 510006, China;3. SYSU-CMU Shunde International Joint Research Institute, Foshan 528300, China;1. Department of Electrical Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia;2. Department of Electrical and Electronic Engineering, University Putra Malaysia, 43400 Serdang, Malaysia;1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;2. University of Chinese Academy of Sciences, Beijing 100039, China;3. Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China |
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| Abstract: | In order to get a wideband and flat gain, a resistive-feedback LNA using a gate inductor to extend bandwidth is proposed in this paper. This LNA is based on an improved resistive-feedback topology with a source follower feedback to match input. A relative small inductor is connected in series to transistor׳s gate, which boosts transistor׳s effective transconductance, compensates gain loss and then leads the proposed LNA with a flat gain and wider bandwidth. Moreover, the LNA׳s noise is partially inhibited by the gate inductor, especially at high frequency. Realized in standard 65-nm CMOS process, this LNA dissipates 12 mW from a 1.5-V supply while its core area is 0.076 mm2. Across 0.4–10.6 GHz band, the proposed LNA provides 9.5±0.9 dB power gain (S21), better than −11-dB input matching, 3.5-dB minimum noise figure, and higher than −17.2-dBm P1 dB. |
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| Keywords: | Bandwidth extension Inductive peaking Low noise amplifier (LNA) Splitting-load Submicron Wideband |
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