A physical model on electron mobility in InGaAs nMOSFETs with stacked gate dielectric |
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| Affiliation: | 1. State Key Lab of Information Security, Institute of Information Engineering, Chinese Academy of Sciences, Beijing, China;2. Zhejiang Wanli University, Ningbo, China;3. Institute of Software, Chinese Academy of Sciences, Beijing, China;4. University of Thessaly, Volos, Greece;1. Department of Physics, Faculty of Art and Science, Balikesir University, 10145 Cagis, Balikesir, Turkey;2. Department of Physics Engineering, Faculty of Engineering, Hacettepe University, Beytepe Ankara, Turkey;1. Division of Electrical & Computer Engineering, School of Electrical Engineering and Computer Science, Louisiana State University, Baton Rouge, LA 70803, United States;2. Department of Electrical and Computer Engineering, The University of Texas at San Antonio, San Antonio, TX 78249, United States;3. Department of Experimental Statistics, Louisiana State University, Baton Rouge, LA 70803, United States |
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| Abstract: | An inversion-channel electron mobility model for InGaAs n-channel metal–oxide-semiconductor field-effect transistors (nMOSFETs) with stacked gate dielectric is established by considering scattering mechanisms of bulk scattering, Coulomb scattering of interface charges, interface-roughness scattering, especially remote Coulomb scattering and remote interface-roughness scattering. The simulation results are in good agreement with the experimental data. The effects of device parameters on degradation of electron mobility, e.g. interface roughness, dielectric constant and thickness of high-k layer/interlayer, and the doping concentration in the channel, are discussed. It is revealed that a tradeoff among the device parameters has to be performed to get high electron mobility with keeping good other electrical properties of devices. |
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| Keywords: | MOSFET High-k dielectric Mobility |
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