Empirical model for the low-frequency noise of hot-carrier degradedsubmicron LDD MOSFETs

This paper discusses the empirical low-frequency (LP) noise behavior of hot-carrier degraded Lowly-Doped Drain (LDD) n-MOSFETs, which have been fabricated in a 0.7-μm CMOS technology. It is shown that the increase of the noise spectral density follows a t^0.3 power law dependence with stress time. Additionally, an empirical relationship will be shown between the input-referred noise spectral density S_VG and the transconductance g_m of the stressed devices. The practical consequences of this exponential dependence will be briefly discussed