Kinetics of the surface reaction H<sub>ad</sub> ↔ OH<sub>ad</sub> on n-Ge(1 1 1)期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Kinetics of the surface reaction H_ad ↔ OH_ad on n-Ge(1 1 1)

Authors:	C. Ehlers^{,U. Kö} nig,J.W. Schultze

Affiliation:	Institut für physikalische Chemie und Elektrochemie, Heinrich-Heine-Universität Düsseldorf, Düsseldorf D-40225, Germany

Abstract:	Different surface states (GeOH and GeH) were found on n-Germanium. These two surface states can be controlled by potential (GeH at U<−0.2 V, GeOH at U>0.1 V in 0.5 M H₂SO₄). The surface reaction H_ad↔OH_ad is reversible and can be described by: (1)

Keywords:	Semiconductor Surface states Germanium Kinetics
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