The low temperature polysilicon (LTPS) thin film MOS Schottky diode on glass substrate for low cost and high performance CO sensing applications |
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| Authors: | Feng-Renn JuangAuthor VitaeYean-Kuen FangAuthor Vitae Yen-Ting ChiangAuthor VitaeTse-Heng ChouAuthor Vitae Cheng-I. LinAuthor VitaeCheng-Wei LinAuthor Vitae |
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| Affiliation: | a VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
b Department of Electronic Engineering, Wufeng University, Minghsiung, Chiayi 621, Taiwan |
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| Abstract: | The Au/SnO2/n-LTPS MOS Schottky diode prepared on a glass substrate for carbon monoxide (CO) sensing applications is studied. The n-LTPS (n-type low temperature polysilicon) is prepared by excimer laser annealing and PH3 plasma treatment of an amorphous Si thin film on glass substrate. The developed Schottky diode exhibits a high relative response ratio of ∼546% to 100 ppm CO ambient under condition of 200 °C and −3 V bias. The response ratio is better than the reported SnO2 based resistive type CO sensors of 100% and 37%, respectively on poly-alumina and glass substrates or comparable to 390% of Pt-AlGaN/GaN Schottky diode CO sensor. Thus, the Au/SnO2/n-LTPS Schottky diode has the potential to develop a low cost high performance CO sensor. |
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| Keywords: | LTPS ELA SnO2 CO sensor Schottky diode |
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