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Structure and dielectric performance of K-doped (Pb0.5Ba0.5)ZrO3 thin films |
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| Authors: | Xihong Hao Jiwei Zhai Zhenxing Yue Xiwen Song Shengli An |
| Affiliation: | a Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China b School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, China c State Key Laboratory of New Ceramic and Fine Processing Tsinghua University, Beijing 62772556, China d State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China |
| Abstract: | In the present investigation (Pb0.5Ba0.5)ZrO3 (PBZ) thin films doped by K (KPBZ) from 0 to 5 mol% were successfully deposited on Pt-buffered silicon substrates by a sol-gel method. The K content dependence of microstructure and electrical properties of KPBZ thin films were studied in detail. It was found that, although all the films displayed a pure perovskite structure without obvious difference, the surface roughness of KPBZ films was decreased with increasing K content. Dielectric measurements showed that the figure of merit (FOM) values of KPBZ thin films were greatly increased by K-doping, and at the same time that the temperature-dependent stability was also improved. Thus, K doping is a promising way to optimize the overall electrical properties of PBZ thin films for potential application in tunable devices. |
| Keywords: | A. Thin films B. Sol-gel chemistry D. Electrical properties |
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