|
|||||
|
|
Ultrafast carrier dynamics of near-band-edge emission in single-crystal ZnO nanorods |
|
| Authors: | Dandan Wang Guozhong Xing Xinying Wang Mi Zhou Jinghai Yang Jian Cao |
| Affiliation: | a School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013, People's Republic of China b Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore c Department of Civil Engineering, Northeast Dianli University, Jilin 132012, People's Republic of China d Department of Physics, Northeast Normal University, Changchun 130024, People's Republic of China e State Key Laboratory of Supramolecular Structure and Materials, and Department of Physics, Jilin University, Changchun 130012, People's Republic of China f Department of Physics, Jilin Normal University, Siping 136000, People's Republic of China g Department of Science and Technology, Linköping University, Campus Norrköping, SE-601 74 Norrköping, Sweden |
| Abstract: | We report on rational synthesis and optical characteristics of highly crystallined ZnO nanorods which were grown by a facile chemical vapor transport method. Temperature-dependent photoluminescence spectra of as-fabricated ZnO nanorods are dominated by near-band-edge emission with a characteristic fine structure due to high crystallinity. Furthermore, the recombination emission involving carrier dynamics of near-band-edge emission in ZnO nanorods was systematically investigated by temperature-dependent time-resolved photoluminescence spectroscopy. Recombination peaks pertaining to the exciton emissions are monitored and resolved in both temporal and spatial regimes. |
| Keywords: | A. Semiconductors B. Vapor deposition D. Optical properties |
| 本文献已被 ScienceDirect 等数据库收录！ | |