Microstructural Probing of （1-x） GeS2- x Ga2S3 System Glasses By Raman Scattering

Roman scattering measurement of （ 1 - x ） GeS2-x Ga2S3 system glasses was conducted in order to understand the microstructural change caused by the addition of Ga2S3 . According to the change of Raman spectra with the addition of Ga2S3, two main structural transformations were deduced ： the gradual enhancement of ethane- like structural units S3 Ge- GeS3 （ 250 cm ^- 1） and S3 Ga- GaS3 （270 cm ^- 1 ） and the appearance of charge imbalanced units Ga2 S2 （ S1/2 ）4 ]^2- and Ga（ S1/2 ）4 ]^- . And this change of structural aspect seems to give as a clue to understanding the cause of the increased rare-earth solubility.

Microstructural probing of (1−x) GeS2−x Ga2S3 system glasses by Raman scattering

Raman scattering measurement of (1−x) GeS_2−x Ga₂S₃ system glasses was conducted in order to understand the microstructural change caused by the addition of Ga₂S₃. According to the change of Raman spectra with the addition of Ga₂S₃, two main structural transformations were deduced: the gradual enhancement of ethane-like structural units S₃Ge−GeS₃ (250 cm⁻¹) and S₃ Ga−GaS₃ (270 cm⁻¹) and the appearance of charge ambalanced units Ga₂S₂(S_1/2)₄]²⁻ and Ga(S_1/2)₄]⁻ And this change of structural aspect seems to give us a clue to understanding the cause of the increased rare-earth solubility. Funded by the National Natural Science Foundation of China (No. 50125205), Scientific Research Foundation of Wuhan University of Technology and the Opening Fund of Key Laboratory of Silicate Materials Science and Engineering, Wuhan University of Technology, Ministry of Education (No. SYSJJ2004-14)