Vortex State Microwave Resistivity in Tl-2212 Thin Films |
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Authors: | N Pompeo S Sarti R Marcon H Schneidewind E Silva |
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Affiliation: | (1) Dipartimento di Fisica “E. Amaldi” and Unità CNISM, Università Roma Tre, Via della Vasca Navale 84, 00146 Roma, Italy;(2) Dipartimento di Fisica and Unità CNISM, Università “La Sapienza,”, 00185 Roma, Italy;(3) Institute for Physical High Technology Jena, P.O.B. 100239, D-07702 Jena, Germany |
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Abstract: | We present measurements of the field induced changes in the 47 GHz complex resistivity, Δρ~(H, T), in Tl2Ba2CaCu2O8+x
(TBCCO) thin films with T
c
≃ 105 K, prepared on CeO2 buffered sapphire substrates. At low fields (μ0
H < 10 mT) a very small irreversible feature is present, suggesting a little role of intergranular phenomena. Above that level
Δρ~(H, T exhibits a superlinear dependence with the field, as opposed to the expected (at high frequencies) quasilinear behaviour.
We observe a crossover between predominantly imaginary to predominantly real (dissipative) response with increasing temperature
and/or field. In addition, we find the clear scaling property Δρ~(H, T = Δρ~H/H
* (T)], where the scaling field H
∗ (T) maps closely the melting field measured in single crystals. We discuss our microwave results in terms of loss of flux lines
rigidity. |
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Keywords: | Tl:2212 microwave response vortex motion |
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