Plasma chemistries for dry etching of NiFe and NiFeCo |
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Authors: | K. B. Jung J. Hong H. Cho J. R. Childress S. J. Pearton M. Jenson A. T. Hurst Jr. |
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Affiliation: | (1) Department of Materials Science and Engineering, University of Florida, 32611 Gainesville, FL;(2) Solid State Electronics Center, Honeywell Inc., 55441 Plymouth, MN |
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Abstract: | Plasma chemistries based on chlorine, bromine, or iodine have been investigated for inductively coupled plasma etching of NiFe and NiFeCo. There is clear evidence of a chemically enhanced etch mechanism with both Cl2- and I2- based mixtures, with no enhancement present for Br2 chemistries. Etch yields are typically low (≤0.25), emphasizing the need for high ion fluxes in order to achieve practical material removal rates. |
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Keywords: | Dry etching inductively coupled plasma (ICP) etching magnetic storage devices magnetic multilayers NiFe |
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