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Plasma chemistries for dry etching of NiFe and NiFeCo
Authors:K. B. Jung  J. Hong  H. Cho  J. R. Childress  S. J. Pearton  M. Jenson  A. T. Hurst Jr.
Affiliation:(1) Department of Materials Science and Engineering, University of Florida, 32611 Gainesville, FL;(2) Solid State Electronics Center, Honeywell Inc., 55441 Plymouth, MN
Abstract:Plasma chemistries based on chlorine, bromine, or iodine have been investigated for inductively coupled plasma etching of NiFe and NiFeCo. There is clear evidence of a chemically enhanced etch mechanism with both Cl2- and I2- based mixtures, with no enhancement present for Br2 chemistries. Etch yields are typically low (≤0.25), emphasizing the need for high ion fluxes in order to achieve practical material removal rates.
Keywords:Dry etching  inductively coupled plasma (ICP) etching  magnetic storage devices  magnetic multilayers  NiFe
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