High gain wideband amplifier IC using 0.7 μm GaAs MESFETtechnology |
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| Authors: | Kinoshita T. Yamashita K. Kotera N. Maeda M. |
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| Affiliation: | Central Res. Lab., Hitachi Ltd., Tokyo; |
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| Abstract: | A high gain wideband differential amplifier with a new circuit configuration is proposed and monolithically integrated by using 0.7 μm-gate GaAs MESFET IC technology. The fabricated IC exhibited gain of 16.7 dB and bandwidth of 3.2 GHz. A gain twice that of a conventional differential GaAs-MESFET amplifier was achieved with small bandwidth degradation |
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