Ultrahigh Current Density Ion Implantation |
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Authors: | W. S. Sampath R. Wei P. J. Wilbur |
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Affiliation: | 1. Department of Mechanical Engineering at Colorado State University in Fort Collins, Colorado, USA
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Abstract: | A study of several engineering alloys implanted at ultrahigh current densities has revealed that the process induces no change in the bulk microsctructure of the materials. Even though temperatures induced during processing exceed the transformation (tempering and annealing) temperatures, there is insufficient time for nucleation and growth reactions to occur during the temperature excursion associated with typical implantation dose and energy conditions. Substantially lower costs should accompany the shorter duration ultrahigh current density implantation process. Auger electron spectrographs reveal a substantially extended nitrogen range over those observed at low current densities (four-fold increase). This enhanced range appears to be due to radiation enhanced diffusion effects. Deeper penetration could lead to more durable surface layers. |
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