Autosolitons in bistable system of silicon with deep impurity levels

Autosolitons in the bistable system of silicon associated with the thermal and electric-field ionization of In deep acceptor levels at a temperature of 77 K are experimentally found and investigated. It is shown that the positive feedback on the activator is related in the considered model of autosolitons to an increasing dependence of the lattice temperature on growth in the hole concentration, while the damping role of the inhibitor is associated with a decrease in the charge-carrier temperature during phonon-induced scattering. This leads to power-loss reduction and lattice-temperature restriction in the vicinity of autosolitons.