Simulation and optimization of CdS-n/Cu2ZnSnS4 structure for solar cell applications

In this work, the performance of solar cell based on CdS-n/Cu₂ZnSnS₄-p hetero-junction is numerically simulated. The aim of the study is to investigate the influence of thickness, defects density and bandgap energy of absorber layer CZTS and the thickness of the buffer layer CdS of the solar cell on electrical parameters J_sc, V_oc, FF and efficiency η of the cell. The results of our simulation allowed us to optimize the parameters above mentioned in order to get the best efficiency at the optimal band gap which corresponds to the maximum of the solar spectrum with optimal values of the electrical performances of the cell. This results lead to develop CZTS solar cells with high efficiency and low cost and give a help full indication for fabrication process.