Monolithic GaAs/InGaP nanowire light emitting diodes on silicon |
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Authors: | Svensson C Patrik T Mårtensson Thomas Trägårdh Johanna Larsson Christina Rask Michael Hessman Dan Samuelson Lars Ohlsson Jonas |
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Affiliation: | Qunano AB, Scheelev?gen 17, Ideon Science Park, S-223 70 Lund, Sweden. |
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Abstract: | Vertical light emitting diodes (LEDs) based on GaAs/InGaP core/shell nanowires, epitaxially grown on GaP and Si substrates, have been fabricated. The devices can be fabricated over large areas and can be precisely positioned on the substrates, by the use of standard lithography techniques, enabling applications such as on-chip optical communication. LED functionality was established on both kinds of substrate, and the devices were evaluated in terms of temperature-dependent photoluminescence and electroluminescence. |
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