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Structural and optical properties of the SiO2-P2O5 films obtained by sol-gel method |
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| Authors: | I. Vasiliu M. Gartner L. Todan M. Elisa F. Ungureanu A. Moldovan M. Zaharescu |
| Affiliation: | a National Institute of Research and Development for Optoelectronics—INOE 2000, Atomistilor Str. 1, P.O. Box Mg-5, RO-77125, Magurele, Bucharest, Romania b Institute of Physical Chemistry "Ilie. Murgulescu", Spl. Independentei 202, P.O. Box 12-194, 060041, Bucharest, Romania c National Institute for Materials Physics, Str. Atomistilor Nr. 105 bis, PO BOX MG 7, RO-77125, Bucharest Romania 4NILPRP, PO Box Mg-16, RO 77125 Magurele, Bucharest, Romania d National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO- 77125 Magurele, Bucharest, Romania |
| Abstract: | A comparative study of the sol-gel films prepared in the SiO2-P2O5 system starting with triethylphosphate, triethylphosphite and phosphoric acid as P precursors was performed. The work addresses basic aspects of physics, chemistry, and engineering of oxide films for applications in microelectronics, sensing, nano-photonics, and optoelectronics by establishing the influence of different precursors on the composition, structure and optical properties of the obtained films. The influence of the type of substrate (glass and indium tin oxide coated glass) and of the thermal treatment (200 and 500 °C) on their structure and properties was studied. By spectroscopic ellipsometry, X-Ray photoemission spectroscopy and atomic force microscopy measurements the high vaporization of the phosphorous during the densification of the films by thermal treatment was noticed when P-alkoxides were used. The phosphoric acid that forms chemical bond with silica network during the sol-gel process leads to better incorporation of P in the silica network as compared to the P-alkoxides. |
| Keywords: | Phosphorus silicate films Sol-gel Ellipsometry XPS AFM |
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