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Photoelectrical properties of In/n-CuIn5Se8 Schottky barriers |
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| Authors: | IV Bodnar VYu Rud' BKh Bairamov M Leon |
| Affiliation: | a Belarusian State University of Informatics and Radioelectronics, P.Brovka str. 6, Minsk, 220013, Belarus b State Polytechnic University, Polytekhnicheskaya 29, 195251 St-Petersburg, Russia c A.F.Ioffe Physico-Technical Institute of the Russian Academy of Sciences, Polytekhnicheskaya 26, 194021 St-Petersburg, Russia d Institute of Physics of Solids and Semiconductors of the Academy of Sciences of Belarus, P. Brovka str. 17, 220072 Minsk, Belarus e Universidad Autonoma de Madrid, 28049 Madrid, Spain |
| Abstract: | CuIn5Se8 homogeneous crystals of n-type conductivity have been grown. Donor centers activation energy has been estimated. In/n-CuIn5Se8 Schottky barriers have been created and the first spectral dependencies of quantum efficiency of photoconversion of these structures have been derived. The nature of interband optical transitions has been interpreted and the band gap values for direct and indirect transitions in CuIn5Se8 crystals have been determined on the results of analysis of the Schottky barriers photoactive edge absorption. A possibility of utilization of CuIn5Se8 crystals in wide-band photoconverters of the optical radiation has been established. |
| Keywords: | 78 66 Li 72 40 +w 73 50 Pz |
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