Effects of zinc doping in DFB lasers emitting at 1.3 and 1.55 mu m |
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| Authors: | Sugano M. Sudo H. Soda H. Kusunoki T. Ishikawa H. |
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| Affiliation: | Fujitsu Labs. Ltd., Atsugi, Japan; |
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| Abstract: | ![]()
Reports on the performance of GaInAsP/InP DFB lasers with Zn-doped active region. At both 1.3 and 1.55 mu m the authors achieved a large bandwidth owing to the increased differential gain. The carrier lifetime of the lasers decreased with doping level. The decreased carrier lifetime had the effect of reducing the pattern effect, and they could obtain a clear eye opening with 4 Gbit/s NRZ modulation.<> |
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