Tunneling currents in In0.53Ga0.47As homojunction diodes and design of InGaAs/InP hetero-structure avalanche photodiodes |
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| Authors: | Masanori Ito Takao Kaneda Kazuo Nakajima Yoshikazu Toyama Hiroaki Ando |
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| Affiliation: | Fujitsu Laboratories, 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211 Japan |
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| Abstract: | Tunneling currents in InGaAs homojunctions were studied from measurements of temperature dependence of breakdown voltage, current-voltage characteristics, tunneling effective mass, and noise spectrum. Zener emission dominates the reverse current prior to avalanche breakdown in the carrier concentration region of >1015 cm?3 and restricts the avalanche gain in InGaAs homojunctions. An InGaAs/InP hetero-structure having a p-n junction in the InP layer was studied to reduce dark currents caused by Zener emission. A design chart to aid in the realization of a high performance APD is discussed. |
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