Optical and electrical properties of ZrSe3 single crystals grown by chemical vapour transport technique |
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Authors: | Kaushik Patel Jagdish Prajapati Rajiv Vaidya S G Patel |
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Affiliation: | (1) Department of Physics, Sardar Patel University, 388 120 Vallabh Vidyanagar, India |
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Abstract: | Single crystals of the lamellar compound, ZrSe3, were grown by chemical vapour transport technique using iodine as a transporting agent. The grown crystals were characterized
with the help of energy dispersive analysis by X-ray (EDAX), which gave confirmation about the stoichiometry. The optical
band gap measurement of as grown crystals was carried out with the help of optical absorption spectra in the range 700–1450
nm. The indirect as well as direct band gap of ZrSe3 were found to be 1.1 eV and 1.47 eV, respectively. The resistivity of the as grown crystals was measured using van der Pauw
method. The Hall parameters of the grown crystals were determined at room temperature from Hall effect measurements. Electrical
resistivity measurements were performed on this crystal in the temperature range 303–423 K. The crystals were found to exhibit
semiconducting nature in this range. The activation energy and anisotropy measurements were carried out for this crystal.
Pressure dependence of electrical resistance was studied using Bridgman opposed anvils set up up to 8 GPa. The semiconducting
nature of ZrSe3 single crystal was inferred from the graph of resistance vs pressure. The results obtained are discussed in detail. |
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Keywords: | ZrSe3 single crystal optical band gap resistivity Hall parameters Bridgman anvil cell |
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