Reproducible low-resistivity AuMn ohmic contact for p-type GaAs |
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| Authors: | Dubon-Chevallier C. Duchenois A.M. Bresse J.F. Ankri D. |
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| Affiliation: | Centre National d'Etudes des Télécommunications, PAB Laboratoire de Bagneux, Bagneux, France; |
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| Abstract: | A novel ohmic contact 96% Au-4% Mn has been established for p-type GaAs. A specific contact resistivity of 2 × 10?7 ?cm2 has been obtained on 2 × 1019 cm?3 epitaxial layers after alloying, and a resistivity of 2 × 10?6 ?cm2 has been obtained on 2 × 1020 cm?3 doped layers without alloying. The contact is stable and reproducible. |
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