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n-Type self-assembled monolayer field-effect transistors for flexible organic electronics |
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| Authors: | Andreas Ringk W.S. Christian Roelofs Edsger C.P. Smits Cees van der Marel Ingo Salzmann Alfred Neuhold Gerwin H. Gelinck Roland Resel Dago M. de Leeuw Peter Strohriegl |
| Affiliation: | 1. Macromolecular Chemistry I, University of Bayreuth, 95440 Bayreuth, Germany;2. Dutch Polymer Institute (DPI), P.O. Box 902, 5600 AX Eindhoven, The Netherlands;3. TU Eindhoven, P.O. Box 513, 5600 MB Eindhoven, The Netherlands;4. Holst Centre/TNO, High Tech Campus 31, 5656 AE Eindhoven, The Netherlands;5. Philips Innovation Services – Materials Analysis, High Tech Campus 11, 5656 AE Eindhoven, The Netherlands;6. Department of Physics, Humbold-Universität zu Berlin, Brook-Taylor-Straße 6, D-12489 Berlin, Germany;7. Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, A-8010 Graz, Austria;8. Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany |
| Abstract: | Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an amorphous, two-dimensional semiconducting sheet on top of the dielectric. Reliable transistors with electron mobilities on the order of 10?3 cm2/V s with limited hysteresis were achieved on rigid as well on flexible substrates. Furthermore, a flexible NMOS-bias inverter based on SAMFETs is demonstrated for the first time. |
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